BAV20 BAV20 sign al diode absolute maximum ratings (ta=25 c) items s y mbol ratings unit r everse voltag vrrm 200 v reverse recovery time tr 50 ns power dissipation 3.33mw/ c ( 25 c ) p 500 mw forward currentif250ma junction temp. tj -65 to 175 c storage temp. tstg -65 to 175 c mechanical data items materials package do-35 case hermetically sealed glass lead/finish double stud/solder plating chip glass passivated dimensions (do-35 ) dimensions in millimeters electrical characteristics (ta=25 c) ratings symbol ratings unit breakdown voltage ir= 100ua bv 200 v peak forward surge current pw= 1sec. ifsurge 1.0 a maximum forward voltage if= 100ma vf 1.0 v maximum reverse current vr=1 50v vr=150v,tj= 10 0 c ir 0.10 15 ua maximum junction capacitance vr= 0, f= 1 mhz cj 1.5 pf max reverse recovery time if=ir= 30ma, vr= 6v, ir= 3ma,rl = 1 00 w trr 50 ns 1 . 0 2 ( 2 6 . 0 ) min. .022(0.55) .018(0.45) 1 . 0 2 ( 2 6 . 0 ) min. .087(2.2) .067(1.7) .153(3.6) .132(3.0)
characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0.01 0.1 1 10 1000 i reverse current ( a ) r t j junction temperature ( c ) 200 100 scattering limit v r =v rrm figure 1. reverse current vs. junction temperature 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i forward current ( ma ) f v f forward voltage ( v ) 2.0 scattering limit t j =25 c figure 2. forward current vs. forward voltage rev. 2, 01-apr-99 3 (4) www.vishay.de ? faxback +1-408-970-5600 document number 85543 0.1 1 10 1 10 100 1000 r differential forward resistance ( ) f i f forward current ( ma ) 100 t j =25 c figure 3. differential forward resistance vs. forward current
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